Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/3010
Title: Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
Authors: Tham, Dwight Jern Ee
Keywords: QC 6118 .S5 T4 2011
Tham, Dwight Jern Ee
Tesis FST 2011
Porous silicon
Issue Date: Sep-2011
Publisher: Terengganu: Universiti Malaysia Terengganu
Abstract: In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes.
URI: http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010
Appears in Collections:Fakulti Sains dan Teknologi

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