Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/5683
Title: Etching Time Effect on Photoluminescence, Porosity, Surface Morphology and Conductivity of Porous Silicon
Authors: Chan Kok Sheng
Wan M. Khairul Wan Mohamed Zin
Dwight Tham Jern Ee
Mohd Ikmar Nizam Mohamad Isa
Mohd Faiz Hassan
Keywords: porous silicon
chemical etching
photoluminescence
energy gap
conductivity
Issue Date: 2016
Publisher: EDUCATUM Journal of Science, Mathematics and Technology (EJSMT)
Citation: Vol. 3 No. 1
Abstract: Recently, porous silicon (PS) gains a lot of research interest with its potential applications in optoelectronics, flat panel displays technology, and chemical sensor. In this work, PS was chemically etched on p-type silicon (Si) wafer by hydrofluoric acid (HF) with 40% nitric acid (HNO3) concentration at different etching time. The PS has porosity dependent on etching time in the range (38-60) % that gives orange-red photoluminescence (PL) between 657 nm to 661 nm. The PL intensity increases and the peak wavelength shows slight blue shift as etching time increases. The energy gap obtained are higher than pure Si (1.11eV). Meanwhile, the conductivity of the PS decreases as the porosity and energy gap increase.
URI: http://hdl.handle.net/123456789/5683
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat 
185-Etching Time Effect on Photoluminescence, Porosity, Surface.pdfFull Text File447.83 kBAdobe PDFView/Open


Items in UMT-IR are protected by copyright, with all rights reserved, unless otherwise indicated.