Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/5683
Full metadata record
DC FieldValueLanguage
dc.contributor.authorChan Kok Sheng-
dc.contributor.authorWan M. Khairul Wan Mohamed Zin-
dc.contributor.authorDwight Tham Jern Ee-
dc.contributor.authorMohd Ikmar Nizam Mohamad Isa-
dc.contributor.authorMohd Faiz Hassan-
dc.date.accessioned2017-04-11T03:31:52Z-
dc.date.available2017-04-11T03:31:52Z-
dc.date.issued2016-
dc.identifier.citationVol. 3 No. 1en_US
dc.identifier.urihttp://hdl.handle.net/123456789/5683-
dc.description.abstractRecently, porous silicon (PS) gains a lot of research interest with its potential applications in optoelectronics, flat panel displays technology, and chemical sensor. In this work, PS was chemically etched on p-type silicon (Si) wafer by hydrofluoric acid (HF) with 40% nitric acid (HNO3) concentration at different etching time. The PS has porosity dependent on etching time in the range (38-60) % that gives orange-red photoluminescence (PL) between 657 nm to 661 nm. The PL intensity increases and the peak wavelength shows slight blue shift as etching time increases. The energy gap obtained are higher than pure Si (1.11eV). Meanwhile, the conductivity of the PS decreases as the porosity and energy gap increase.en_US
dc.language.isoenen_US
dc.publisherEDUCATUM Journal of Science, Mathematics and Technology (EJSMT)en_US
dc.subjectporous siliconen_US
dc.subjectchemical etchingen_US
dc.subjectphotoluminescenceen_US
dc.subjectenergy gapen_US
dc.subjectconductivityen_US
dc.titleEtching Time Effect on Photoluminescence, Porosity, Surface Morphology and Conductivity of Porous Siliconen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat 
185-Etching Time Effect on Photoluminescence, Porosity, Surface.pdfFull Text File447.83 kBAdobe PDFView/Open


Items in UMT-IR are protected by copyright, with all rights reserved, unless otherwise indicated.