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http://umt-ir.umt.edu.my:8080/handle/123456789/7073Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | M. N. OSMAN | - |
| dc.contributor.author | S. YAAKOB | - |
| dc.contributor.author | M. R. YAHYA | - |
| dc.contributor.author | Z. AWANG | - |
| dc.contributor.author | A. F. AWANG MAT | - |
| dc.date.accessioned | 2017-10-04T04:46:13Z | - |
| dc.date.available | 2017-10-04T04:46:13Z | - |
| dc.date.issued | 2007 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/7073 | - |
| dc.description.abstract | A study of tbe effects on power consumption exhibited by multiple-gateq layout pseudomorphic HEMTs device is presented here. This study required that the DC parameter extraction to be carried out on the p-.HEMT device with a specific number of gate layouts. From the 1-V measurement, it was found that the p-HEMT that applied six gated layout can reduce 75% of power consumption as compared to two gated layout in producing the same amoum of161• This result proved that the p-HEMT device with higher number ofgates consumes less power. The consequences of this lead to the reduction of device power consumption without sacrifying the device performance. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Journal of Sustainability Science and Management | en_US |
| dc.title | THE EFFECTS OF MULTIPLE-GATED LAYOUT 0 POWER CONSUMPTION OF PSEUDOMORPHIC-REMTS | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Journal Articles | |
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