Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/7073
Title: THE EFFECTS OF MULTIPLE-GATED LAYOUT 0 POWER CONSUMPTION OF PSEUDOMORPHIC-REMTS
Authors: M. N. OSMAN
S. YAAKOB
M. R. YAHYA
Z. AWANG
A. F. AWANG MAT
Issue Date: 2007
Publisher: Journal of Sustainability Science and Management
Abstract: A study of tbe effects on power consumption exhibited by multiple-gateq layout pseudomorphic HEMTs device is presented here. This study required that the DC parameter extraction to be carried out on the p-.HEMT device with a specific number of gate layouts. From the 1-V measurement, it was found that the p-HEMT that applied six gated layout can reduce 75% of power consumption as compared to two gated layout in producing the same amoum of161• This result proved that the p-HEMT device with higher number ofgates consumes less power. The consequences of this lead to the reduction of device power consumption without sacrifying the device performance.
URI: http://hdl.handle.net/123456789/7073
Appears in Collections:Journal Articles

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