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dc.contributor.authorH.SOETEDJO-
dc.contributor.authorI.SABTU-
dc.contributor.authorM.R.YAHYA-
dc.contributor.authorA.F.AWANG MAT-
dc.date.accessioned2017-10-04T04:47:15Z-
dc.date.available2017-10-04T04:47:15Z-
dc.date.issued2007-
dc.identifier.urihttp://hdl.handle.net/123456789/7079-
dc.description.abstractVarious characteristics of the pHEMT structures have been investigated using a three-probe contact technique. This measurement is considerably new as from the epitaxial layer (sample) prior to the actual device completion; the justification of current-voltage characteristics of transistor device could be done. This justification could lead to reducing time-and cost when poor sample is found. Among the three different samples of pHEMTs of AlGaAs / InGaAs, the current -voltage characterization has shown that the structure with a larger channel thickness (26nm) shows greater saturation current and breakdown voltage.en_US
dc.language.isoenen_US
dc.publisherJournal of Sustainability Science and Managementen_US
dc.titleA RAPID JUSTIFICATION OF HEMT DEVICE STRUCTURES BASED ON A THREE-PROBE CONTACT TECHNIQUEen_US
dc.typeArticleen_US
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