A RAPID JUSTIFICATION OF HEMT DEVICE STRUCTURES BASED ON A THREE-PROBE CONTACT TECHNIQUE

Abstract

Various characteristics of the pHEMT structures have been investigated using a three-probe contact technique. This measurement is considerably new as from the epitaxial layer (sample) prior to the actual device completion; the justification of current-voltage characteristics of transistor device could be done. This justification could lead to reducing time-and cost when poor sample is found. Among the three different samples of pHEMTs of AlGaAs / InGaAs, the current -voltage characterization has shown that the structure with a larger channel thickness (26nm) shows greater saturation current and breakdown voltage.