Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/7090
Full metadata record
DC FieldValueLanguage
dc.contributor.authorC.C. YAP-
dc.contributor.authorM.YAHAYA-
dc.contributor.authorMURSYIDAH-
dc.contributor.authorM.M. SALLEH-
dc.date.accessioned2017-10-04T04:49:49Z-
dc.date.available2017-10-04T04:49:49Z-
dc.date.issued2007-
dc.identifier.urihttp://hdl.handle.net/123456789/7090-
dc.description.abstractPolymer light emitting diodes with the configuration of ITO/PVK:TPP/Alq3/Al were fabricated using indium tin oxide (ITO) as anode, poly(9-vinylcarbazole) (PVK) as host, tetraphenylporphyrin (TPP) as red dopant, tris(8-hydroxyquinoline) aluminum (Alq3) as electrontransporting green emitter and aluminum (Al) as cathode. The electrical and electroluminescence properties of the devices with various TPP doping concentrations by weight in PVK host were investigated and compared with un-doped device. The turn-on voltage of the un-doped device (Von=21v) is larger than doped devices (Von-15v). Besides, the el emission of the un-doped device originates only from Al-q3. As for the doped devices, the light observed was the combination from TPP and Alq3 emission with different ratio. The results show that TPP dopants not only facilitates in transporting the electrons from Alq3 to TPP-doped PVK layer but also tune the emission color of the PLEDs.en_US
dc.language.isoenen_US
dc.publisherJournal of Sustainability Science and Managementen_US
dc.subjectPolymer light emitting diodesen_US
dc.subjectelectroluminescenceen_US
dc.subjectPVKen_US
dc.subjectTPPen_US
dc.subjectAlq3en_US
dc.titleFABRICATION OF POLYMER LIGHT EMITTING DIODES WITH ITO/PVK:TPP/ALQ3/AL STRUCTUREen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat 
32-35.pdf1.7 MBAdobe PDFView/Open
Show simple item record


Items in UMT-IR are protected by copyright, with all rights reserved, unless otherwise indicated.