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dc.contributor.authorS.HASIAH-
dc.contributor.authorH.B. SENIN-
dc.date.accessioned2017-10-04T04:54:08Z-
dc.date.available2017-10-04T04:54:08Z-
dc.date.issued2007-
dc.identifier.urihttp://hdl.handle.net/123456789/7113-
dc.description.abstractThe localization of electron in the molecule structure of chlorophyll has been found to exhibit conducting characteristic as semiconductor materials. To obtain a complete picture of this behavior, the energy gap, dark electrical conductivity and current-voltage characterization of chlorophyll have been measured at room temperature. A simple diode has been fabricated using chlorophyll thin film by the spin coating technique. Indium tin oxide (ITO) and aluminum layers were used as their electrodes. The energy gap of chlorophyll was found to be 5.15 eV and the average electrical conductivity was 1.92x10-9Ω-1m-1. The forward current-voltage measurement indicated a bias voltage in the range of 0.540V to 0.996V. The backward current-voltage measurement showed a bias voltage in the range of -0.012V to -1.032V. Beyond the reading of 0.996V and -1.032V for the forward and the backward voltages the current increased slowly.en_US
dc.language.isoenen_US
dc.publisherJournal of Sustainability Science and Managementen_US
dc.subjectChlorophyllen_US
dc.subjectthin filmen_US
dc.subjectindium tin oxideen_US
dc.subjectdiodeen_US
dc.titleELECTRICAL CHARACTERIZATION OF CHLOROPHYLLen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

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