Surface morphology, optical and electrical properties of porous silicon produced by chemical etching

Abstract

In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes.