Abstract:
A study of tbe effects on power consumption exhibited by multiple-gateq layout
pseudomorphic HEMTs device is presented here. This study required that the DC parameter extraction
to be carried out on the p-.HEMT device with a specific number of gate layouts. From the 1-V
measurement, it was found that the p-HEMT that applied six gated layout can reduce 75% of power
consumption as compared to two gated layout in producing the same amoum of161• This result proved
that the p-HEMT device with higher number ofgates consumes less power. The consequences of this
lead to the reduction of device power consumption without sacrifying the device performance.
