Abstract:
Poly (3-thiophene acetic acid) (P3 T AA), is presently considered as one of the most
reliable emitting materials because of its excellent stability and luminescent properties
is suitable to apply in many field including light sensor field or solar cell. The
objective of this research is to prepare and characterize the P3 T AA/Chlo thin film as
light sensor. It includes the preparation process of P3 T AA/Chlo thin film through the
electrochemical method using Electrochemical Impedance Spectroscopy (EIS) and
Spin Coating. P3 TAA/Chlo thin film was studied in electrical characterization. Four
Point Probe was used to obtain the voltage value of P3 T AA/Chlo thin film for produce
the conductivity value. The average conductivity of P3 T AA/Chlo thin film in the dark
obtained was 0.0084 S/m and the higher value of conductivity under visible light
intensity obtained was 0.094 S/m. From the graph, it was proven that conductivity of
P3 T AA/Chlo thin film was increased when the intensity of light also increased. As
conclusion, the P3 T AA/Chlo thin film was found suitable to be used as a light sensor
or in the solar cell in the range of 10 W/m2 2 to 50 W/m of visible light intensity. It is
recommend adding doping in P3 T AA/Chlo thin film in order to increase its
conductivity, content and charge carrier types and to add range intensity of light on
the high rate for producing the highest value of conductivity for used in a light sensor.
