Preliminary study of hall effect of chlorophyll with pop lypyrrole thin film on indium tin oxide

Abstract

This work is the preliminary study of Hall Effect of chlorophyll with polypyrrole thin film on Indium Tin Oxide. The chlorophyll and polypyrrole was deposited on the Indium Tin Oxide (ITO) substrate by using the spin coater machine. Four kind of sample which are Indium Tin Oxide without thin film, Indium Tin Oxide with 5 layers of thin film, Indium Tin Oxide with 10 layers of thin film and Indium Tin Oxide with 15 layers of thin film. Each kind of the sample prepared with 4 duplicates. The conductivity had been check with the Four Point Probe (FPP) method. From the Four Point Probe study the resistivity values is decrease due to increase of number of the thin film. For the conductivity of Indium Tin Oxide with thin film is increase after coated with the thin film. Meanwhile, for the conductivity of thin film, it is decrease due to the number of the thin film. In another words, chlorophyll and polypyrrole is not suitable to act as the thin film in the Hall Effect measurement. The thickness of the thin film is measured by using the Scanning Electron Microscope (SEM). The value of thickness of thin film for each layer is in the range 2.88 µm to 5.6 µm. This study is using the Hall Effect machine to determine the connection between 4 point, Sheet carrier Density, Hall Voltage, Hall Mobility and Sheet resistivity. The result of all the measurement is showing the characteristic of the sample 5 which contain the 5 layers of thin film and sample 13 which contain 15 layers of thin film. Before measure the Hall Effect value, connection has to be check by using the Hall Effect machine. The connection of sample 5 is good compare with the sample 13 which might contain wire broken. From the result we get from the Hall Effect machine, we can conclude that the chlorophyll and polypyrrole is not suitable to be the thin film for the Hall Effect because the chlorophyll will reduces the conductivity due to the thickness. However, Indium Tin Oxide is a suitable substrate for Hall Effect because the conductivity and the resistivity are in the range that can measure by the Hall Effect.